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BUJD103AD
NPN power transistor with integrated diode
Rev. 02 -- 6 October 2009 Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.
1.2 Features and benefits
Fast switching High voltage capability Integrated anti-parallel E-C diode Very low switching and conduction losses
1.3 Applications
DC-to-DC converters Electronic lighting ballasts Inverters Motor control systems
1.4 Quick reference data
Table 1. IC Ptot VCESM Quick reference Conditions see Figure 4Tmb 25 C VBE = 0 V Min Typ Max 4 80 700 Unit A W V collector current total power dissipation collector-emitter peak voltage DC current gain Symbol Parameter
Static characteristics hFE IC = 500 mA; VCE = 5 V; see Figure 12Tj = 25 C VCE = 5 V; IC = 3 A; Tmb = 25 C; see Figure 12 13 22 12.5 32 -
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
2. Pinning information
Table 2. Pin 1 2 3 B C E Pinning information Symbol Description base collector emitter
[1]
Simplified outline
mb
Graphic symbol
C
B
E 2 1 3
sym131
SOT428 (DPAK)
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3. Ordering information
Table 3. Ordering information Package Name BUJD103AD DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number
4. Limiting values
Table 4. Symbol VCESM VCBO VCEO IC ICM IB IBM Ptot Tstg Tj Limiting values Parameter collector-emitter peak voltage collector-base voltage collector-emitter voltage collector current peak collector current base current peak base current total power dissipation storage temperature junction temperature Tmb 25 C; see Figure 4 see Figure 1, 2 and 3 Conditions VBE = 0 V IE = 0 A IB = 0 A Min -65 Max 700 700 400 4 8 2 4 80 150 150 Unit V V V A A A A W C C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
2 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
VCC LC
10 VCL(CE) probe point IC (A) 8
001aac000
IBon VBB
LB DUT 6
001aab999
4
Fig 1.
Test circuit for reverse bias safe operating area
2
0 0 200 400 600 800 1000 VCEclamp (V)
Fig 2.
102 IC (A) 10 ICM(max) IC(max)
(1)
Reverse bias safe operating area
001aac001
duty cycle = 0.01 II(3) tp = 20 s 50 s 100 s 200 s 500 s DC
1
(2)
10-1
10-2
I(3) III(3)
10-3 1 10
102 VCEclamp (V)
103
Fig 3.
Forward bias safe operating area for Tmb 25 C
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
3 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
120 Pder (%) 80
001aab993
40
0 0 40 80 120 Tmb (C) 160
Fig 4.
Normalized total power dissipation as a function of mounting base temperature
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
4 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 1.56 Unit K/W thermal resistance from see Figure 5 junction to mounting base thermal resistance from printed-circuit-board mounted; minimum junction to ambient footprint; see Figure 6
Rth(j-a)
-
75
-
K/W
10 Zth(j-mb) (K/W) 1 = 0.5 0.2 0.1 10-1 0.05 0.02 0.01
tp T Ptot
001aab998
=
tp T
t
10-2 10-5
10-4
10-3
10-2
10-1
1 tp (s)
10
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse width
7.0
7.0
2.15
1.5
2.5
4.57
001aab021
Fig 6.
Minimum footprint SOT428
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
5 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
6. Characteristics
Table 6. Symbol ICES Characteristics Parameter Conditions Min [1] [1]
Typ 0.1 0.2 0.25 0.3 0.85 0.92 0.97 1.04 17 22 20 16 12.5
Max 1 2 1 5 1 0.1 1 10 0.5 0.6 1 1 1.2 1.6 1.5 1.5 32 32 40 22 -
Unit mA mA mA mA mA mA mA mA V V V V V V V V V
Static characteristics collector-emitter cut-off VBE = 0 V; VCE = 700 V; Tj = 25 C current VBE = 0 V; VCE = 700 V; Tj = 125 C; VBE = 0 V; VCE = 700 V; Tj = 25 C; VBE = 0 V; VCE = 700 V; Tj = 100 C ICBO ICEO IEBO VCEOsus VCEsat collector-base cut-off current VCB = 700 V; IE = 0 A;
[1]
400 10 13 12 11 -
collector-emitter cut-off VCE = 400 V; IB = 0 A; current emitter-base cut-off current collector-emitter sustaining voltage collector-emitter saturation voltage VEB = 9 V; IC = 0 A VEB = 7 V; IC = 0 A IB = 0 A; IC = 10 mA; LC = 25 mH; see Figure 7 and 8 IC = 1 A; IB = 0.2 A; see Figure 9 and 10 IC = 2 A; IB = 0.5 A; see Figure 9 and 10 IC = 3 A; IB = 0.6 A; see Figure 9 and 10 IC = 4 A; IB = 1 A; see Figure 9 and 10
[1]
VBEsat
base-emitter saturation IC = 1 A; IB = 0.2 A; see Figure 11 voltage IC = 2 A; IB = 0.5 A; see Figure 11 IC = 3 A; IB = 0.6 A; see Figure 11 forward voltage DC current gain IF = 2 A IC = 1 mA; VCE = 5 V; Tmb = 25 C; see Figure 12 IC = 500 mA; VCE = 5 V; Tj = 25 C; see Figure 12 IC = 1 A; VCE = 5 V; Tmb = 25 C; see Figure 12 IC = 2 A; VCE = 5 V; Tmb = 25 C; see Figure 12 IC = 3 A; VCE = 5 V; Tmb = 25 C; see Figure 12
VF hFE
Dynamic characteristics ton turn-on time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 ; Tj 25 C; resistive load; see Figure 13 and 14 0.52 0.6 s
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
6 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
Table 6. Symbol ts
Characteristics ...continued Parameter storage time Conditions IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 ; Tj = 25 C; resistive load; see Figure 13 and 14 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tj = 25 C; inductive load; see Figure 15 and 16 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tj = 100 C; inductive load; see Figure 15 and 16 Min Typ 2.7 Max 3.3 Unit s
-
1.2
1.4
s
-
-
1.8
s
tf
fall time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 ; Tj = 25 C; resistive load; see Figure 17 and 14 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tj = 100 C; inductive load; see Figure 15 and 16 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tj 25 C; inductive load; see Figure 18 and 16
-
0.3
0.35
s
-
-
120
ns
-
30
60
ns
[1]
Measured with half sine-wave voltage (curve tracer)
50 V 100 to 200 horizontal oscilloscope vertical 6V 300 30 Hz to 60 Hz
001aab987
IC (mA)
250
1
100
Fig 7.
Test circuit for collector-emitter sustaining voltage
10 0
min VCE (V) VCEOsus
001aab988
Fig 8.
Oscilloscope display for collector-emitter sustaining voltage test waveform
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
7 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
2.0 VCEsat (V) 1.6 IC = 1 A 2A 3A 4A
001aab995
001aab997
VCEsat (V) 0.5
0.4 1.2 0.3 0.8
0.2
0.4
0.1
0 10-2
10-1
1 IB (A)
10
0 10-1
1 IC (A)
10
Fig 9.
Collector-emitter saturation voltage as a function of base current; typical values
001aab996
Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values
102 Tj = 25 C hFE
001aab994
1.4 VBEsat (V) 1.2 1.0 0.8
VCE = 5 V
10 0.6 0.4 0.2 0 10-1 1 10-2
1V
1 IC (A)
10
10-1
1 IC (A)
10
Fig 11. Base-emitter saturation voltage as a function of collector current; typical values
Fig 12. DC current gain as a function of collector current; typical values
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
8 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
VCC
IC 90 % ICon 90 %
RL VIM 0 tp T
001aab989
RB DUT 10 % t tf IB ton ts toff IBon 10 % t tr 30 ns -IBoff
001aab990
Fig 13. Test circuit for resistive load switching
Fig 14. Switching times waveforms for resistive load
VCC IC ICon LC LB DUT 90 %
IBon VBB
001aab991
10 % tf t
Fig 15. Test circuit for inductive load switching
IB
ts toff IBon t
-IBoff
001aab992
Fig 16. Switching times waveforms for inductive load
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
9 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
VCC
VCC
RL VIM 0 tp T
001aab989
LC LB DUT
RB DUT IBon VBB
001aab991
Fig 18. Test circuit for inductive load switching Fig 17. Test circuit for resistive load switching
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
10 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
7. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428
y E b2 A A1 A E1
mounting base D1 HD
D2
2 L2 1 3
L L1
b1 e e1
b
w
M
A
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.93 0.46 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.00 c 0.56 0.20 D1 6.22 5.98 D2 min 4.0 E 6.73 6.47 E1 min 4.45 e 2.285 e1 4.57 HD 10.4 9.6 L 2.95 2.55 L1 min 0.5 L2 0.9 0.5 w 0.2 y max 0.2
OUTLINE VERSION SOT428
REFERENCES IEC JEDEC TO-252 JEITA SC-63
EUROPEAN PROJECTION
ISSUE DATE 06-02-14 06-03-16
Fig 19. Package outline SOT428 (DPAK)
BUJD103AD_2 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
11 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
8. Revision history
Table 7. Revision history Release date 20091006 Data sheet status Product data sheet Product data sheet Change notice Supersedes BUJD103AD_1 Document ID BUJD103AD_2 Modifications: BUJD103AD_1
*
Various changes to content.
20090508
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
12 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BUJD103AD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 October 2009
13 of 14
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 October 2009 Document identifier: BUJD103AD_2

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